FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR PDF

Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.

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But what really disappoint me is that the binding quality of hardcover version is too bad. Shopbop Designer Fashion Brands. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. Sandeep Sharma marked it as to-read Jul 04, Shusheel is currently reading it Mar 01, Every chapter is revised to reflect advances in VLSI devices in the last 10 years since the publication of the original book.

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition.

Please try again later. CMOS performance factors; 6. If you seek to understand devices from a physical point of view this book just fails to live up to it.

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Fundamentals of Modern VLSI Devices

There are no discussion topics on this book yet. Nadia Awad rated it it was amazing Nov 02, This makes the book invaluably useful in practical transitor design as well as in the classroom. This book is not yet featured on Listopia.

The bipolar-transitor part takes the reader all the way from the classical junction transistor to the modern polysilicon-emitter, SiGe-base variety. The optimization fnudamentals these devices for VLSI applications is also covered. Vignesh Reviraj marked it as to-read Apr 30, Prashanth rated it it was amazing Dec 17, Diego Nahuel marked it as to-read Aug 11, Yuan TaurTak H. I must revise my previous comment about this book.

Account Options Sign in. I am suprised to find this 2nd edition was re-printed in Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom.

But one thing make me to rate one star to yjan star. Rajendra marked it as to-read Sep 22, Mayee marked it as to-read Apr 16, Amazon Drive Cloud storage from Amazon. Would you like to tell us about a lower price?

Fundamentals of Modern VLSI Devices by Yuan Taur

Pejman Khosropour rated it liked it Feb 06, The book is logically organized. Get fast, free shipping with Amazon Prime. From the content and organization of this book I rate it 4.

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They also discuss in detail the scaling, and physical limits fundamemtals the scaling, of CMOS and bipolar devices. I am not sure if this is the reason why the price of hardcover is slash down to close to the paperback. CMOS device design; 5. Fevices chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved.

But it may be too simplified for the people who want to know all the details fundamentaos physical origins. Want to Read saving…. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. The internationally renowned authors highlight the intricate interdependencies and subtle t Learn the basic properties and pf of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition.

AmazonGlobal Ship Orders Internationally. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide.