This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).
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BSIM4 flicker noise models. Intrinsic charge and capacitance models.
SearchWorks Catalog
Channel DC current and output resistance. Review of the charge-deficit transient NQS model. Circuit simulation and compact models. Velocity saturation and velocity overshoot. SearchWorks Catalog Stanford Libraries. Available to subscribing institutions. Fo current in subthreshold and linear operations.
The intent of this book ch. Source and drain parasitics: BSIM4 diode charge and capacitance [4].
BSIM4 channel thermal noise models. Introduction and chapter objectives.
Source and drain area and perimeter calculation. BSIM4 – aimed for nm down to 20nm nodes.
The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Describe the connection issue. Composite stamps for transient NQS model.
BSIM – the beginning. BSIM4 junction leakage due to trap-assisted tunneling [4]. Charge and capacitance models. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Fringing and overlap capacitances. Gate and channel geometries and materials.
World Scientific Publishing Co. Responsibility Weidong Liu, Chenming Hu. Snd representations and parameters. Find it at other libraries via WorldCat Limited preview. Source and drain contact scenarios and diffusion resistances. Diode temperature-dependence model [4].
BSIM4 and MOSFET Modeling For IC Simulation – Semantic Scholar
Connections of a multi-transistor stack. World Scientific Fof view. Time discretization, equation linearization and matrix stamping. Skip to search Skip to main content.
It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.
BSIM4 and MOSFET modeling for IC simulation [electronic resource] in SearchWorks catalog
Junction diode IV and CV models. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Saturation junction leakage current and zero-bias capacitance models. Bibliography Includes bibliographical references and index. Imprint Singapore ; Hackensack, N. Source and drain of a transistor with multiple gate fingers.
Nielsen Book Data Physical description xix, p. Series International series on advances in solid state electronics and technology.
